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Devices and structures

Devices and structures

Ferroelectric domain wall diodes get flexible

16 Mar 2021 Isabelle Dumé
ferroelectric domain walls
Double current-voltage (𝐼–𝑉) curves of 100 sweeps (black lines) between −5 V and 5 V for a LiNbO3 cell. The inset shows the SEM image of the cell in contact with left and right electrodes. Courtesy: C Wang
Researchers have made ferroelectric domain wall diodes from structures etched on the surface of an i

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Isabelle Dumé is a contributing editor to Physics World
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