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Semiconductors and electronics

Semiconductors and electronics

New ferroelectric switches could reduce energy use in microelectronics

12 Jul 2023 Isabelle Dumé
Scanning transmission electron microscopy images of columns of aluminium, boron and nitrogen atoms as they move in response to an electric field. The left panel shows an actual image, the right panel shows a theoretical model. The two are very similar except the experimental image is grey and fuzzy while the theoretical one is sharp and in false colour with blue and grey dots representing atoms.
Scanning transmission electron microscopy (STEM) images of columns of aluminium, boron and nitrogen atoms as they move in response to an electric field. Left: In-situ experimental STEM images. Right: Predicted behaviour based on first-principles calculations. (Courtesy: Carnegie Mellon College of Engineering)
A new family of ferroelectric materials could be used to make more energy-efficient microelectronics

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Isabelle Dumé is a contributing editor to Physics World
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